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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA1015
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
general purpose amplification.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-50
-50
-5
-150
400
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -50
Collector-Emitter Breakdown Voltage BVCEO -50
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
70
25
Transition Frequency
fT 80
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-0.3
-1.1
700
-
-
7
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
IC=-2mA, VCE=-6V
IC=-150mA, VCE=-6V
IC=-1mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz, IE=0
Classification of hFE1
Rank
O
Y
Range
70~140
120~240
GR
200~400
BL
350~700