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PDF S9014LT1 Data sheet ( Hoja de datos )
| Número de pieza | S9014LT1 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
| Logotipo |  |
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S9014LT1
NPN Epitaxial Silicon Transistor
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
SOT-23
Collector-Emitter Voltage: VCEO= 45V
Collector Dissipation: PC= 200mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
50
45
5
100
200
150
-55~+150
V
V
V
mA
mW
oC
oC
Tolerance : 0.1mm
Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IC= 100µA, IE= 0
IC= 0.1mA, IB= 0
IE= 100µA, IC= 0
VCB= 50V, IE= 0
VCE= 35V, IB= 0
VEB= 3V, IC= 0mA
VCE= 5V, IC= 1mA
IC= 100mA, IB= 5mA
IC= 100mA, IB= 5A
VCE= 5V, IC= 10mA
f= 30MHz
Min Max Unit
50 V
45 V
5V
0.1 µA
0.1 µA
0.1
200 1000
µA
0.3 V
1V
150 MHz
hFE CLASSIFICATION
Classification
L
hFE 200 – 450
Device Marking
S9014LT1=J6
H
450 – 1000
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No.: S9014LT1
Page: 1 / 1
1 page | ||
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