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PDF D669A Data sheet ( Hoja de datos )
| Número de pieza | D669A | |
| Descripción | NPN Type Plastic Encapsulate Transistors | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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 1. 180V, NPN Transistor - Hitachi  Hay una vista previa y un enlace de descarga de D669A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation
PCM : 1mW Tamb=25
Collector current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 180 V
Collector-emitter voltage
VCEO
2SD669 : 120 V
2SD669A : 160 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
7.6±0.2
2.7±0.2
1.3±0.2
4.0±0.1
10.8±0.2
O3.1± 0.1
12 3
2.2±0.1
15.5±0.2
1.27±0.1
0.76±0.1
4.58±0.1
2.29 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimens ions in Millimeters
CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO Ic= 1mA IE=0
V(BR)CEO Ic= 10mA IB=0
V(BR)EBO
ICBO
IEBO
IE= 1mA Ic=0
VCB=160 V , IE=0
VEB= 4V , IC =0
hFE(1) * VCE=5V, IC= 150 mA
hFE(2) * VCE=5V, IC= 500mA
2SD669
2SD669A
180
120
160
5
2SD669
2SD669A
60
60
30
Collector-emitter saturation voltage
VCE (sat) * IC=500 mA, IB=50mA
Base-emitter voltage
Transition frequency
VBE *
fT
VCE=5V,IC= 150mA
VCE=5V, IC=150mA
140
Collector output capacitance
Cob VCB=10 V , IE=0,f=1MHz
14
* The 2SD669 and 2SD669A are grouped by hFE1 as follows.
Rank
2SD 669
2SD669A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
MAX UNIT
V
V
V
10 A
10 A
320
200
1V
1.5 V
MHz
pF
http://www.SeCoSGmbH.com/
10-Jul -2007 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D669A.PDF ] | |
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