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PDF SC8276 Data sheet ( Hoja de datos )
| Número de pieza | SC8276 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SC8276 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SC8276Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.1
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
12.5 @ VGS=4.5V
13.0 @ VGS=4.0V
24V 8A 13.5 @ VGS=3.8V
18.0 @ VGS=3.1V
23.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
TOP VIEW
1.85 㫧 0.03
BOTTOM VIEW
0.65
8276
Date Code
Mark area
1-pin index mark S1
0.210 㫧 0.010
0.107 㫧 0.007
S1 S2
G1 G2
S1 S2
0.65
0.65
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
6 - φ 0.31
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±12
8
80
PT Total Power Dissipation a
1.3
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Apr,26,2016
www.samhop.com.tw
1 page  
SC8276
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(ON) Limit
10
1
100us
1ms
10ms
0.1 VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1 1
100ms
DC
10
VSS - Source to Source Voltage - V
1000
Ver 4.1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2 Mounted on FR-4 board of
1 inch2 , 1oz
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
rth - tw
100
Mounted on FR-4 board
10
Single Pulse
1
0.001
0.01
0.1 1 10
Pulse width tw (S)
5
100 1000
Apr,26,2016
www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SC8276.PDF ] | |
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