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PDF IXYX25N250CV1HV Data sheet ( Hoja de datos )
| Número de pieza | IXYX25N250CV1HV | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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High Voltage
XPTTM IGBT
w/ Diode
Advance Technical Information
IXYX25N250CV1HV
VCES = 2500V
IC110 = 25A
VCE(sat) 4.0V
tfi(typ) = 246ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
Maximum Ratings
2500
2500
±20
±30
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
95 A
25 A
30 A
235 A
VCGlEam=p1e5dVI,nTdVuJc=tiv1e50L°oCa,dRG = 5
ICM
= 100
1500
A
V
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
937
-55 ... +175
175
-55 ... +175
300
260
W
°C
°C
°C
°C
°C
Mounting Force
20..120 /4.5..27
N/lb
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 100°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 25A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0 5.0 V
25 μA
100 μA
±100 nA
3.4 4.0 V
4.7 V
TO-247PLUS-HV
(IXYX...HV)
G
E
C
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100735.(6/16)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
26
Eoff Eon
22 TJ = 150ºC , VGE = 15V
VCE = 1250V
18
I C = 50A
14
32
28
24
20
10 16
I C = 25A
6 12
28
5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
26
28
Eoff Eon
22 RG = 5ΩVGE = 15V
VCE = 1250V
18
I C = 50A
24
20
14 16
10 12
6
IC = 25A
8
24
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
600
t f i td(off)
500 RG = 5Ω, VGE = 15V
VCE = 1250V
400
TJ = 150ºC
300
600
500
400
300
200
TJ = 25ºC
100
200
100
00
10 15 20 25 30 35 40 45 50
IC - Amperes
IXYX25N250CV1HV
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
24
Eoff Eon
20 RG = 5ΩVGE = 15V
VCE = 1250V
16
TJ = 150ºC
24
20
16
12 12
TJ = 25ºC
88
44
00
10 15 20 25 30 35 40 45 50
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
500
1200
450 t f i
td(off)
TJ = 150ºC, VGE = 15V
400 VCE = 1250V
1050
900
350 750
300
I C = 25A
250
I C = 50A
600
450
200 300
150 150
100
5
0
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
460 350
t f i td(off)
380 RG = 5Ω, VGE = 15V
VCE = 1250V
300
300
I C = 25A
250
220
I C = 50A
200
140 150
60
25
50 75 100 125
TJ - Degrees Centigrade
100
150
© 2016 IXYS CORPORATION, All Rights Reserved
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