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PDF IXYY8N90C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYY8N90C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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900V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYY8N90C3
IXYP8N90C3
VCES = 900V
IC110 = 8A
VCE(sat) 3.0V
tfi(typ) = 130ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-220
Maximum Ratings
900 V
900 V
±20 V
±30 V
20 A
8A
48 A
4A
15 mJ
ICM = 16
@VCE VCES
125
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
0.35 g
3.00 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1 TJ = 150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 6.0 V
10 A
150 μA
100 nA
2.15 3.00 V
2.75 V
TO-252 (IXYY)
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100399B(12/14)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.6
Eoff Eon - - - -
0.5 TJ = 125ºC , VGE = 15V
VCE = 450V
0.4
I C = 16A
5
4
3
0.3 2
I C = 8A
0.2 1
0.1
30
0.40
0.35
0.30
0
60 90 120 150 180 210 240 270 300
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon - - - -
RG = 30ΩVGE = 15V
VCE = 450V
I C = 16A
2.4
2.0
1.6
0.25 1.2
0.20 0.8
IC = 8A
0.15 0.4
0.10
25
50 75
TJ - Degrees Centigrade
100
0.0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200 100
180
tfi
td(off) - - - -
90
RG = 30Ω, VGE = 15V
160
VCE = 450V
80
140 TJ = 125ºC
70
120 60
100
TJ = 25ºC
80
50
40
60 30
40
8
20
9 10 11 12 13 14 15 16
IC - Amperes
IXYY8N90C3
IXYP8N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.40
Eoff Eon - - - -
0.35 RG = 30ΩVGE = 15V
VCE = 450V
0.30 TJ = 125ºC
2.4
2.0
1.6
0.25 1.2
0.20 0.8
TJ = 25ºC
0.15 0.4
0.10
8
0.0
9 10 11 12 13 14 15 16
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
280 280
t f i td(off) - - - -
240 TJ = 125ºC, VGE = 15V
VCE = 450V
200
240
200
160 I C = 8A
160
120 120
80 80
I C = 16A
40 40
00
30 60 90 120 150 180 210 240 270 300
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
220 110
200 t f i
td(off) - - - -
RG = 30Ω, VGE = 15V
180 VCE = 450V
160
I C = 8A
100
90
80
140 70
120 60
100 50
80
I C = 16A
40
60 30
40
25
50 75 100
TJ - Degrees Centigrade
20
125
© 2014 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYY8N90C3.PDF ] | |
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