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PDF IXYT80N90C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYT80N90C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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XPTTM 900V IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYT80N90C3
IXYH80N90C3
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
900 V
900 V
±20 V
±30 V
165 A
160 A
80 A
360 A
ICM = 160
@VCE VCES
830
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
60A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 A
750 A
100 nA
2.3 2.7 V
2.9 V
VCES = 900V
IC110 = 80A
VCE(sat) 2.7V
tfi(typ) = 86ns
TO-268 (IXYT)
G
E
C (Tab)
TO-247 (IXYH)
GCE
C (Tab)
G = Gate
E = Emiiter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.4
Eoff Eon - - - -
3.0 TJ = 150ºC , VGE = 15V
VCE = 450V
2.6
I C = 80A
2.2
12
10
8
6
1.8 4
1.4 I C = 40A
2
1.0 0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
3.5 Eoff
Eon - - - -
RG = 2ΩVGE = 15V
3.0 VCE = 450V
2.5
IC = 80A
8
7
6
5
2.0 4
1.5 3
1.0 2
IC = 40A
0.5 1
0.0
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
225 150
200
tfi
td(off) - - - -
140
RG = 2Ω, VGE = 15V
175
VCE = 450V
130
150 120
TJ = 150ºC
125 110
100 100
75 TJ = 25ºC
90
50 80
25 70
40 50 60 70 80 90 100
IC - Amperes
IXYT80N90C3
IXYH80N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
Eoff Eon - - - -
4 RG = 2ΩVGE = 15V
VCE = 450V
10
8
36
2 TJ = 150ºC
4
1 TJ = 25ºC
2
00
40 50 60 70 80 90 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
250 360
225 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 450V
320
280
175
I C = 40A
150
240
200
125 160
I C = 80A
100 120
75 80
50 40
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200 180
t f i td(off) - - - -
175 RG = 2Ω, VGE = 15V
VCE = 450V
150
I C = 40A
160
140
125 120
100 100
I C = 80A
75 80
50
25
50 75 100 125
TJ - Degrees Centigrade
60
150
© 2015 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYT80N90C3.PDF ] | |
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