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PDF NTE281 Data sheet ( Hoja de datos )
| Número de pieza | NTE281 | |
| Descripción | Silicon Complementary Transistors | |
| Fabricantes | NTE | |
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Hay una vista previa y un enlace de descarga de NTE281 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE280 (NPN) & NTE281 (PNP)
Silicon Complementary Trasistors
Audio Power Amplifier
Description:
The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package
designed for use in high power, high fidelity audio frequency amplifier applications.
Features:
D High Power Dissipation: PC = 100W
D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Current–Gain Bandwidth Product
Output Capacitance
V(BR)CEO IC = 100mA, IB = 0
V(BR)EBO IE = 10mA, IC = 0
ICBO VCB = 60V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 5V, IC = 2A
VCE(sat) IC = 7A, IB = 700mA
VBE(on) VCE = 5V, IC = 7A
fT VCE = 5V, IC = 2A
Ccb VCE = 10V, IE = 0, f = 1MHz
140 – – V
5––V
– – 100 µA
– – 100 µA
40 – 140
– – 3.0 V
– – 2.5 V
– 5 – MHz
– 220 – pF
Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and
NTE281 (PNP).
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE281.PDF ] | |
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