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PDF 2SD2615 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2615 | |
| Descripción | Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
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Transistors
Power Transistor (120V, 6A)
2SD2615
2SD2615
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1674.
!Circuit diagram
C
B
R1 R2
E
R1 5.0kΩ B : Base
R2 300Ω C : Collector
E : Emitter
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
120
120
6
6
10
2
30
150
−55 ∼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2615
TO-220FN
2K∼20K
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
120
120
−
−
−
2K
−
−
−
−
−
−
−
−
40
50
∗1 Measured using pulse current ∗2 Transition frequency of the device.
Max.
−
−
100
3
1.5
20K
−
−
Unit
V
V
µA
mA
V
−
MHz
pF
Conditions
IC = 50µA
IC = 5mA
VCB = 120V
VEB = 5V
IC/IB = 3A/6mA
VCE/IC= 3V/2A
VCE = 5V , IE = −0.2A , f = 10MHz
VCB = 10V , IE = 0A , f = 1MHz
∗1
∗1
∗2
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD2615.PDF ] | |
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