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PDF FEP16JT Data sheet ( Hoja de datos )

Número de pieza FEP16JT
Descripción 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! FEP16JT Hoja de datos, Descripción, Manual

FEP16DT thru FEP16JT
®
FEP16DT/FEP16GT/FEP16JT
Pb Free Plating Product
Pb
16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
Mechanical Data
Case: Heatsink TO-220AB/TO-220CE
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL FEP16DT FEP16GT FEP16JT UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
200
140
200
400
280
400
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98
1.3
5.0
100
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
600
420
600
1.7
V
V
V
A
A
V
uA
uA
nS
pF
oC/W
oC
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/

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