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PDF W25NM60N Data sheet ( Hoja de datos )

Número de pieza W25NM60N
Descripción STW25NM60N
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! W25NM60N Hoja de datos, Descripción, Manual

STB25NM60Nx - STF25NM60N
STP25NM60N - STW25NM60N
N-channel 600 V, 0.130 , 21 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, I2PAK, D2PAK, TO-247
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB25NM60N
t(s)STB25NM60N-1
cSTF25NM60N
uSTP25NM60N
rod )STW25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.160
< 0.160
< 0.160
< 0.160
< 0.160
21 A
21 A
21 A(1)
21 A
21 A
P t(s1. Limited only by maximum temperature allowed
te c100% avalanche tested
le duLow input capacitance and gate charge
so roLow gate input resistance
- Ob te PApplication
) leSwitching applications
ct(s bsoDescription
du - OThis series of devices is realized with the second
ro )generation of MDmesh™ technology. This
P t(srevolutionary MOSFET associates a new vertical
te cstructure to the company’s strip layout to yield one
le uof the world’s lowest on-resistance and gate
dcharge. It is therefore suitable for the most
so rodemanding high efficiency converters
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Ob lete PTable 1. Device summary
soOrder codes
Marking
Ob STB25NM60N
B25NM60N
Package
D²PAK
Packaging
Tape and reel
STB25NM60N-1
B25NM60N
I²PAK
Tube
STF25NM60N
F25NM60N
TO-220FP
Tube
STP25NM60N
P25NM60N
TO-220
Tube
STW25NM60N
W25NM60N
TO-247
Tube
June 2008
Rev 12
1/18
www.st.com
18

1 page




W25NM60N pdf
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD =300 V, ID = 10 A
RG = 4.7 VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
24.5 ns
18 ns
94 ns
24 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
t(s)ISDM (1)
cVSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 21 A, VGS = 0
utrr
rod )Qrr
P t(sIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 23)
te ctrr
le uQrr
dIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
so ro1. Pulse width limited by safe operating area
OObbssoolleettee PPrroodduucctt((ss)) -- OObbsolete P2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
21
84
1.3
427
7.2
33.6
526
9.1
34.5
A
A
V
ns
µC
A
ns
µC
A
5/18

5 Page





W25NM60N arduino
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
)D1 1.27
0.050
t(sE 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
ce1 4.95
5.15
0.194
0.202
duF 1.23
1.32
0.048
0.051
ro )H1 6.20
6.60
0.244
0.256
P t(sJ1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
te cL1 3.50
3.93
0.137
0.154
le uL20 16.40
0.645
so rodL30 28.90
1.137
P 3.75
3.85
0.147
0.151
OObbssoolleettee PPrroodduucctt((ss)) -- OObbsolete PQ 2.65
2.95
0.104
0.116
11/18

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