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PDF BUL58B Data sheet ( Hoja de datos )
| Número de pieza | BUL58B | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
·High Speed Switching
APPLICATIONS
·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250 V
VCEO Collector-Emitter Voltage
100 V
VEBO Emitter-Base Voltage
10 V
IC Collector Current-Continuous
12 A
ICM Collector Current-peak
17 A
IB Base Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
4A
50 W
150 ℃
-55~150 ℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL58B.PDF ] | |
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| BUL58B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Seme LAB |
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