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PDF K3758 Data sheet ( Hoja de datos )

Número de pieza K3758
Descripción Silicon N Channel MOS Type Field Effect Transistor
Fabricantes Toshiba Semiconductor 
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No Preview Available ! K3758 Hoja de datos, Descripción, Manual

2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching Regulator Applications
unit
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
/Circuit
Maximum Ratings (Ta = 25°C)
3.84 0.2
3.84 0.2
101.05.5mmaax x
44..77mmaxax
1.3
1.3
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
Rating
500
500
±30
5
20
58
12
5
5.8
150
-55~150
Unit
V
V
V
W
mJ
A
mJ
°C
°C
11..55mmaxax
0.81
0.81 max
00..4455
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
SC-46
JEITA
TO-220AB
Thermal Characteristics
TOSHIBA
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
2.16 °C/W
83.3 °C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.82 mH, IAR = 5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1 2004-02-26

1 page




K3758 pdf
2SK3758
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.01
10
0.01
0.02
0.05
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.16°C/W
100 1
10 100
PULSE WIDTH tw (s)
1 10
SAFE OPERATING AREA
100
ID max ( PULSED) *
10
ID max ( CONTINUOUS) *
100 µs *
1 ms *
1 DC OPERATION
Tc = 25°C
SINGLE NONREPETITIVE PULSE
0.1 Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EA S – Tch
16
12
8
4
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25
VDD = 90 V, L = 0.82 mH
ÅAS=
1
2
L
I2

BVDSS
BVDSS VDD

5 2004-02-26

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