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Número de pieza | IRFP442R | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | New Jersey Semi-Conductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFP442R (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFP440R, IRFP441R, IRFP442R, IRFP443R
Avalanche Energy Rated
N-Channel Power MOSFETs
8A and 7A, 500V-400V
ros(on) = 0.85O and 1.1O
Features:
• Single pulse avalanche energy rated
• SOA ispower-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
N-CHANNEL ENHANCEMENT MODE
D
The IRFP440R, IRFP441R, IRFP442R and IRFP443R are
advanced power MOSFETs designed,tested, and guaran-
teed to withstand a specified level of energy in the break-
down avalanche mode of operation. These are n-channel
enhancement-mode silicon-gate power field-effect transis-
tors designed for applications such asswitching regulators,
switching converters, motor drivers, relay drivers, and driv-
ers for high-power bipolar switching transistors requiring
high speed and low gate-drive power. These types can bo
operated directly from integrated circuits.
The IRFP-types are suppliedin the JEDEC TO-247 plastic,
package.
TERMINAL DIAGRAM
TERMINAL DESIGNATION
Absolute Maximum Ratings
VM
VOCB
lo @ Tc = 25°C
ID @ Tc = 100°C
lou
Vas
Po @ Tc = 25°C
EM,
Tj
T.IJ
Parameter
Drain - Source Voltage ©
Drain - Gate Voltage (Rus = 20 KO) CD
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current @
Gate - Source Voltage
Max. Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy Rating ®
Operating Junction and
Storage Temperature flange
Lead Temperature
TOP VIEW
JEOEC TO-247
IRFP44CR
500
500
8.0
5.0
32
IRFP441R IRFP442R
450 500
450 500
8.0 7.0
5.0 4.0
32 28
±20
125 (See Fig. 14)
1.0 (See Fig. 14)
480
IRFP443R
450
450
7.0
4.0
28
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
Units
V
V
A
A
A
V
W
W/°C
mj
°C
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions\vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IRFP442R.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP442R | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFP442R | N-Channel Power MOSFET / Transistor | New Jersey Semi-Conductor |
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