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PDF IRFP442R Data sheet ( Hoja de datos )

Número de pieza IRFP442R
Descripción N-Channel Power MOSFET / Transistor
Fabricantes New Jersey Semi-Conductor 
Logotipo New Jersey Semi-Conductor Logotipo



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No Preview Available ! IRFP442R Hoja de datos, Descripción, Manual

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFP440R, IRFP441R, IRFP442R, IRFP443R
Avalanche Energy Rated
N-Channel Power MOSFETs
8A and 7A, 500V-400V
ros(on) = 0.85O and 1.1O
Features:
Single pulse avalanche energy rated
SOA ispower-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
• High input impedance
N-CHANNEL ENHANCEMENT MODE
D
The IRFP440R, IRFP441R, IRFP442R and IRFP443R are
advanced power MOSFETs designed,tested, and guaran-
teed to withstand a specified level of energy in the break-
down avalanche mode of operation. These are n-channel
enhancement-mode silicon-gate power field-effect transis-
tors designed for applications such asswitching regulators,
switching converters, motor drivers, relay drivers, and driv-
ers for high-power bipolar switching transistors requiring
high speed and low gate-drive power. These types can bo
operated directly from integrated circuits.
The IRFP-types are suppliedin the JEDEC TO-247 plastic,
package.
TERMINAL DIAGRAM
TERMINAL DESIGNATION
Absolute Maximum Ratings
VM
VOCB
lo @ Tc = 25°C
ID @ Tc = 100°C
lou
Vas
Po @ Tc = 25°C
EM,
Tj
T.IJ
Parameter
Drain - Source Voltage ©
Drain - Gate Voltage (Rus = 20 KO) CD
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current @
Gate - Source Voltage
Max. Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy Rating ®
Operating Junction and
Storage Temperature flange
Lead Temperature
TOP VIEW
JEOEC TO-247
IRFP44CR
500
500
8.0
5.0
32
IRFP441R IRFP442R
450 500
450 500
8.0 7.0
5.0 4.0
32 28
±20
125 (See Fig. 14)
1.0 (See Fig. 14)
480
IRFP443R
450
450
7.0
4.0
28
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
Units
V
V
A
A
A
V
W
W/°C
mj
°C
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions\vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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