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PDF IRFP460PBF Data sheet ( Hoja de datos )

Número de pieza IRFP460PBF
Descripción N-Channel Type Power MOSFET
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! IRFP460PBF Hoja de datos, Descripción, Manual

IRFP460PBF
®
IRFP460PBF
Pb Free Plating Product
Pb
20A,500V Heatsink N-Channel Type Power MOSFET
Features
RDS(on) (Max 0.24 )@VGS=10V
Gate Charge (Typical 130nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1. Gate {
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 500V
RDS(ON) = 0.24 ohm
ID = 20A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-3PB pkg is well suited for
adaptor power unit and small power inverter application.
TO-3PB
3
2
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
500
20
12.5
80
± 30
1050
20
23.5
4.5
235
1.88
-55 to +150
300
Typ
--
0.24
--
Max
0.53
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/

1 page




IRFP460PBF pdf
IRFP460PBF
®
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/6
http://www.thinkisemi.com/

5 Page










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