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Número de pieza | IRFBC30 | |
Descripción | N-Channel MOSFET Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFBC30 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·High current ,high speed switching
·Switch mode power supplies
·DC-AC converters for welding equipment and
Uninterruptible power supplies and motor
Driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±20
V
V
ID Drain Current-Continuous
3.6 A
IDM Drain Current-Single Pluse
14 A
PD Total Dissipation @TC=25℃
75 W
TJ Max. Operating Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1.7 ℃/W
62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IRFBC30.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFBC30 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | STMicroelectronics |
IRFBC30 | Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A) | International Rectifier |
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