(PDF) IRFB4310 Datasheet - N-Channel MOSFET Transistor

Número de pieza	IRFB4310
Descripción	N-Channel MOSFET Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFB4310 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.007Ω(Max) Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pluse 550 A PD Total Dissipation @TC=25℃ 330 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.45 ℃/W 62 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF IRFB4310 Data sheet ( Hoja de datos )