(PDF) IRFB4110 Datasheet - N-Channel MOSFET Transistor

Número de pieza	IRFB4110
Descripción	N-Channel MOSFET Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFB4110 FEATURES ·Drain Current –ID= 180A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pluse 670 A PD Total Dissipation @TC=25℃ 370 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 0.402 ℃/W Thermal Resistance, Junction to Ambient 62 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF IRFB4110 Data sheet ( Hoja de datos )