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PDF IRLR120N Data sheet ( Hoja de datos )

Número de pieza IRLR120N
Descripción Power MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! IRLR120N Hoja de datos, Descripción, Manual

$GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 100V
Lower RDS(ON): 0.176(Typ.)
BVDSS = 100 V
RDS(on) = 0.22
ID = 8.4 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
8.4
5
29
±20
94
8.4
3.5
6.5
2.5
35
0.28
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.5
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1

1 page




IRLR120N pdf
1&+$11(/
32:(5 026)(7
IRLR120N
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
Same Type
50kas DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
RG
5V
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
5

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