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Número de pieza | CCS15S30 | |
Descripción | Schottky Barrier Diode | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CCS15S30 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Schottky Barrier Diode Silicon Epitaxial
CCS15S30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: VF(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
CCS15S30
1: Cathode
2: Anode
CST2C
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
©2015 Toshiba Corporation
1
Start of commercial production
2013-07
2015-11-13
Rev.4.0
1 page Package Dimensions
CCS15S30
Unit: mm
Weight: 1.9 mg (typ.)
TOSHIBA: 1-1W1S
Nickname: CST2C
Package Name(s)
©2015 Toshiba Corporation
5
2015-11-13
Rev.4.0
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet CCS15S30.PDF ] |
Número de pieza | Descripción | Fabricantes |
CCS15S30 | Schottky Barrier Diode | Toshiba |
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