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PDF THGBM4G5D1HBAIR Data sheet ( Hoja de datos )
| Número de pieza | THGBM4G5D1HBAIR | |
| Descripción | 4GB e-MMC Module | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de THGBM4G5D1HBAIR (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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THGBM4G5D1HBAIR
TOSHIBA e-MMC Module
4GB THGBM4G5D1HBAIR
INTRODUCTION
THGBM4G5D1HBAIR is 4-GByte density of e-MMC Module product housed in 153 ball BGA package. This unit utilizes
advanced TOSHIBA NAND flash devices and a controller chip assembled as Multi Chip Module. THGBM4G5D1HBAIR
has an industry standard MMC protocol for easy use.
FEATURES
THGBM4G5D1HBAIR Interface
THGBM4G5D1HBAIR has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode support.
Ball / Signal Allocation
P-VFBGA153-1113-0.50-002 (11.5 x 13mm, H1.0mm max. package)
14 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
13 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
12 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
11 NC NC NC
NC NC NC
10 NC NC NC
RFU RFU RFU Vss Vcc RFU
NC NC RFU
9 NC NC NC
RFU
Vcc NC NC NC
8 NC NC NC
7 RFU NC NC
RFU
Vss
Top View
Vss RFU
NC NC NC
NC NC RFU
6 RFU DAT7 VccQ
Vcc
RFU
CLK NC VssQ
5 DAT2 DAT6 RFU
RFU Vcc Vss RFU RFU RST_n
CMD VssQ VccQ
4 DAT1 DAT5 VssQ NC Index
VccQ VccQ VssQ
3 DAT0 DAT4 NC NC NC NC RFU NC NC NC NC NC NC VccQ
2 NC DAT3 VDDi NC NC NC NC NC NC NC NC NC VssQ NC
1 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
ABCD E FGH J K LMN P
Pin Number
Name
Pin Number
Name
Pin Number
A3 DAT0 C2 VDDi J10
A4 DAT1 C4 VssQ K5
A5 DAT2 C6 VccQ K8
B2 DAT3 E6 Vcc K9
B3 DAT4 E7 Vss M4
B4 DAT5 F5 Vcc M5
B5 DAT6 G5 Vss M6
B6
DAT7
H10
Vss
N2
NC: No Connect, can be connected to ground or left floating.
RFU: Reserved for Future Use, should be left floating for future use.
Name
Vcc
RST_n
Vss
Vcc
VccQ
CMD
CLK
VssQ
Pin Number
N4
N5
P3
P4
P5
P6
Name
VccQ
VssQ
VccQ
VssQ
VccQ
VssQ
1 Oct. 15th, 2011
1 page  
THGBM4G5D1HBAIR
Density Specifications
TOSHIBA
Part Number
Density
Interleave
Operation
User Area Density
[Bytes]
THGBM4G5D1HBAIR
4-Gbyte
Non Interleave
3,959,422,976
1) User area density shall be reduced if enhanced user data area is defined.
SEC_COUNT in
Extended CSD
0x00760000
Register Informations
OCR Register
OCR bit
VDD Voltage window
Value
[6:0]
Reserved
000 0000b
[7]
1.70-1.95
1b
[14:8]
2.0-2.6
000 0000b
[23:15]
2.7-3.6
1 1111 1111b
[28:24]
Reserved
0 0000b
[30:29]
Access Mode
10b
[31] ( card power up status bit (busy) )1
1) This bit is set to LOW if the card has not finished the power up routine.
CID Register
CID-slice
[127:120]
[119:114] *
[113:112] *
[111:104] *
[103:56]
[55:48]
[47:16]
[15:8]
[7:1]
[0]
Name
Manufacturer ID
Reserved
Card/BGA
OEM/Application ID
Product name
Product revision
Product serial
Manufacturing date
CRC7 checksum
Not used, always ‘1’
Field
MID
-
CBX
OID
PNM
PRV
PSN
MDT
CRC
-
Width
8
6
2
8
48
8
32
8
7
1
Value
0001 0001b
0b
01b
0b
0x30 30 34 47 34 39 (004G49)
0x00
Serial number
see-JEDEC Specification
CRC7
1b
5 Oct. 15th, 2011
5 Page 
Bus Signal Levels
THGBM4G5D1HBAIR
Open-Drain Mode Bus Signal Level
Parameter
Output HIGH voltage
Output LOW voltage
Symbol
VOH
VOL
Test Conditions
IOH = -100uA
IOL = 2mA
Min
VccQ - 0.2
Max
0.3
Unit
V
V
Push-Pull Mode Bus Signal Level (High-Voltage)
Parameter
Output HIGH voltage
Symbol
Test Conditions
VOH IOH = -100uA @ VDD min
Min
0.75 * VccQ
Max Unit
V
Output LOW voltage
VOL IOL = 100uA @ VDD min
0.125 * VccQ V
Input HIGH voltage
VIH
0.625* VccQ VccQ + 0.3
V
Input LOW voltage
VIL
VSS - 0.3
0.25 * VccQ V
Push-Pull Mode Bus Signal Level (Dual-Voltage)
Parameter
Output HIGH voltage
Symbol
Test Conditions
VOH IOH = -2mA @ VDD min
Output LOW voltage
VOL IOL = 2mA @ VDD min
Input HIGH voltage
VIH
Input LOW voltage
VIL
Min
VccQ - 0.45
0.65 * VccQ
VSS - 0.3
Max Unit
V
0.45 V
VccQ + 0.3
V
0.35 * VccQ V
11 Oct. 15th, 2011
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet THGBM4G5D1HBAIR.PDF ] | |
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