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PDF AUIRGPS4067D1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRGPS4067D1 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97726C
AUIRGPS4067D1
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
6μs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *
C
G
E
n-channel
VCES = 600V
IC = 160A, TC = 100°C
tSC 6μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
C
Benefits
High Efficiency in a Wide Range of Applications
Suitable for Applications in the Low to Mid-Rrange
Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
E
GC
Super-247
AUIRGPS4067D1
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF NOMINAL
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
dDiode Nominal Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
*Qualification standards can be found at http://www.irf.com/
1
600
240g
160
120
360
480
120g
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.20
0.44
–––
–––
Units
°C/W
www.irf.com
09/27/2012
1 page  
480
420
VGE = 18V
VGE = 15V
VGE = 12V
360 VGE = 10V
VGE = 8.0V
300
240
180
120
60
0
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 30μs
10
8
6 ICE = 60A
ICE = 120A
4 ICE = 195A
2
0
5 10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
10
20
8
6 ICE = 60A
ICE = 120A
4 ICE = 195A
2
0
5 10 15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
20
www.irf.com
AUIRGPS4067D1
480
420 TJ = -40°C
360
TJ = 25°C
TJ =175°C
300
240
180
120
60
0
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 30μs
10
8
6 ICE = 60A
ICE = 120A
4 ICE = 195A
2
0
5 10 15 20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
480
420 TJ = -40°C
360 TJ = 25°C
TJ = 175°C
300
240
180
120
60
0
0 2 4 6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
5
5 Page 
Case Outline and Dimensions — Super-247
AUIRGPS4067D1
Super-247 (TO-274AA) Part Marking Information
Part Number
IR Logo
AUPS4067D1
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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