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PDF DMN10H170SVT Data sheet ( Hoja de datos )
| Número de pieza | DMN10H170SVT | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
RDS(ON) max
160mΩ @ VGS = 10V
200mΩ @ VGS = 4.5V
ID max
TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.015 grams (Approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin-Out
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN10H170SVT-7
DMN10H170SVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
11N
11N = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb Mar
23
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
2016
D
Apr
4
2017
E
May Jun
56
2018
F
Jul
7
Aug
8
2019
G
Sep
9
1 of 6
www.diodes.com
2020
H
2021
I
Oct Nov Dec
OND
February 2015
© Diodes Incorporated
1 page  
DMN10H170SVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
Rthja(t) = r(t) * Rthja
Rthja = 101°C/W
Duty Cycle, D = t1/ t2
0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
E1 E
A A2
A1
e
6x b
c
L
4x1
L2
TSOT26
Dim Min Max Typ
A 1.00
A1 0.01 0.10
A2 0.84 0.90
D 2.90
E 2.80
E1 1.60
b 0.30 0.45
c 0.12 0.20
e 0.95
e1 1.90
L 0.30 0.50
L2 0.25
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN10H170SVT.PDF ] | |
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