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PDF DMN10H120SE Data sheet ( Hoja de datos )

Número de pieza DMN10H120SE
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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No Preview Available ! DMN10H120SE Hoja de datos, Descripción, Manual

Product Summary
V(BR)DSS
100V
RDS(ON) max
110m@ VGS = 10V
122m@ VGS = 6.0V
ID max
TA = +25°C
3.6A
3.4A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
DMN10H120SE
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
D
Top View
Pin Out - Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H120SE-13
Qualification
Standard
Case
SOT223
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
YWW
N120SE
= Manufacturer’s Marking
N120SE = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 5 = 2015)
WW = Week (01 - 53)
DMN10H120SE
Document number: DS37484 Rev. 3 - 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated

1 page




DMN10H120SE pdf
DMN10H120SE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
Rthja (t) = r(t) * Rthja
Rthja = 93°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100 1000
Package Outline Dimensions & Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
b1 Q
C
e1
e
A A1
Gauge
Plane
0.25
Seating
Plane
b
E E1
L
0°-10°
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 -
- 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
DMN10H120SE
Document number: DS37484 Rev. 3 - 2
5 of 6
www.diodes.com
January 2015
© Diodes Incorporated

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