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PDF SS8050 Data sheet ( Hoja de datos )
| Número de pieza | SS8050 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | YS | |
| Logotipo |  |
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 1. 25V, 1500mA, 1W, NPN Transistor  Hay una vista previa y un enlace de descarga de SS8050 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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DATA SHEET
SEMICONDUCTOR
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation
PCM : 1 W
:2W
(TA=25℃)
(TC=25℃)
SS8050
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
TJ, Tstg
Junction and Storage Temperature
Value
40
25
5
1500
-55-150
123
Units
V
V
V
mA
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
fT
Ic=100uA, IE=0
Ic=0.1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA,f=30MHZ
40
25
5
85
40
100
V
V
V
0.1 µA
0.1 µA
0.1 µA
400
0.5 V
1.2 V
1V
MHz
CLASSIFICATION OF hFE(2)
Rank
B C DE
Range
85-160
120-200
160-300
300-400
http://www.yeashin.com
1
REV.02 20120705
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS8050.PDF ] | |
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