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PDF RFPD3890 Data sheet ( Hoja de datos )

Número de pieza RFPD3890
Descripción Hybrid Power Doubler amplifier module
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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No Preview Available ! RFPD3890 Hoja de datos, Descripción, Manual

RFPD3890
27dB Power Doubler Hybrid
40MHz to 1003MHz
The RFPD3890 is a hybrid power doubler amplifier module.
The part employs GaAs MESFET, GaAs pHEMT and GaN
HEMT die, has high output capability, and is operated from
40MHz to 1003MHz. It provides excellent linearity and
superior return loss performance with low noise and optimal
reliability.
V+
INPUT
OUTPUT
RFPD3890
Package: SOT-115J
Features
Low Current
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under All
Terminations
High Output Capability
27.0dB Min. Gain at 1003MHz
385mA Max. at 24VDC
Ordering Information
RFPD3890
Box with 50 Pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Applications
40MHz to 1003MHz CATV
Amplifier Systems
Rating
70
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS141120
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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