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PDF RFCM5304 Data sheet ( Hoja de datos )

Número de pieza RFCM5304
Descripción INTEGRATED AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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No Preview Available ! RFCM5304 Hoja de datos, Descripción, Manual

RFCM5304
5-220MHz SI-BJT
INTEGRATED AMPLIFIER
The RFCM5304 is an Integrated Reverse Amplifier Module. The
part employs Silicon die, a 20dB range variable attenuator,
Preamp switch off, interstage port and a power enable feature,
has high output capability and is operated from 5MHz to 220MHz.
It provides excellent linearity and superior return loss performance
with low noise and optimal reliability.
Preamp Bias Power Enable
V+
INPUT
Preamp
Driver
EQ
Att. adjust
Functional Block Diagram
OUTPUT
Package: 21 pin,
11.0 mm x 11.0 mm x 1.375mm
Features
Excellent Linearity
Extremely High Output Capability
Voltage Controlled Attenuator
Power Enable Feature
Preamp Power Off Feature
Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
39dB Typical Gain at 220MHz
208mA Typical at 12VDC
Ordering Information
RFCM5304SB
RFCM5304SQ
RFCM5304SR
RFCM5304TR7
RFCM5304TR13
RFCM5304PCBA-410
RFCM5304PCK-410
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 250 pieces
13” Reel with 750 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with
Sample Bag
Applications
5MHz to 220MHz CATV Amplifier
For Reverse Channel Systems
Headend Equipment
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS150319
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFCM5304 pdf
Evaluation Board Schematic
V+
Power Enable
Att. Adjust
RF INPUT
C6
4.7nF
FB1
Bead 1k5
D1
TGL34-33A
C5
4.7nF
C4
4.7nF
C1
DNI
TR1
MRFXF0021
R7 R2
51R 51R
C2
0.5pF
C3
0.5pF
L1
56nH
L2
56nH
R6
0R
21 20 19 18 17 16
1 15
2 14
U1
3
RFCM5304
13
12
4 11
TR2
MRFXF2753
5 6 7 8 9 10
R4
0R
R5
0R
C14
10n
R3 R8
51R 51R
C8 C9
0p5 1p
L3 L4
47n 47n
RF OUTPUT
C7
DNI
GND
Evaluation Board Bill of Materials (BOM)
Designator
C1, C7
C2, C3, C8
C4, C5, C6
C9
C14
R2, R3, R7, R8
R4, R5, R6
L1, L2
L3, L4
FB1
Value
DNI
0.5 pF
4.7 nF
1.0 pF
10nF
51 R
0R
56 nH
47 nH
1k5 @ 100MHz
Description
Capacitor, 0402, NPO, 50V, 0.25pF
Capacitor, 0402, X7R, 50V, 10%
Capacitor, 0402, NPO, 50V, 0.25pF
Capacitor, 0402, X7R, 25V, 10%
Resistor, 0402, TK100, 1%
Resistor, 0402, Jumper
Inductor, 0402, 5%
Inductor, 0402, 5%
Impedance Bead, DCR 0.75, 250mA, 0603
D1 33V
T1 1:1
T2 1:4
U1
Transient Suppressor Diode, 5%
Transformer Input
Transformer Output
Amplifier
Manufacturer
Taiyo Yuden
Diotec
Mini-RF
Mini-RF
RFMD
Part Number
BK 1608LM152-T
TGL34-33A
MRFXF0021
MRFXF2753
RFCM5304
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS150319
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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