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PDF 2N7000G Data sheet ( Hoja de datos )

Número de pieza 2N7000G
Descripción Small Signal MOSFET
Fabricantes ON Semiconductor 
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No Preview Available ! 2N7000G Hoja de datos, Descripción, Manual

2N7000G
Small Signal MOSFET
200 mAmps, 60 Volts
NChannel TO92
Features
AEC Qualified
PPAP Capable
This is a PbFree Device*
MAXIMUM RATINGS
Rating
Drain Source Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
Drain Current
Continuous
Pulsed
Total Power Dissipation
Derate above 25°C
@
TC
=
25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Value
60
60
±20
±40
200
500
350
2.8
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, 1/16from case
for 10 seconds
RqJA
TL
357 °C/W
300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 8
1
http://onsemi.com
200 mAMPS
60 VOLTS
RDS(on) = 5 W
NChannel
D
G
S
TO92
CASE 29
STYLE 22
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWW G
G
1
Source
2
Gate
3
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
2N7000/D

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