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PDF D2558 Data sheet ( Hoja de datos )
| Número de pieza | D2558 | |
| Descripción | NPN Transistor - 2SD2558 | |
| Fabricantes | Sanken electric | |
| Logotipo |  |
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2SD2558Darlington
Equivalent circuit
B
C
(70Ω)
E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2558
200
200
6
5
2
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=200V
VEB=6V
IC=10mA
VCE=5V, IC=1A
IC=1A, IB=5mA
VCE=10V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C)
2SD2558
100max
5max
Unit
µA
mA
200min
V
1500 to 6500
1.5max
V
15typ
MHz
110typ
pF
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
1.75
2.15
1.05
+0.2
-0.1
0.8
5.45±0.1
5.45±0.1
0.65
+0.2
-0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
5
250mA
5
0
m
A
1
0
mA
4 2.5mA
3 1.2mA
0.6mA
2
0.3mA
1
0
02 4 6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
5
4
3
2
1
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
8000
5000
(VCE=5V)
1000
500
100
50
125˚C
25˚C
–30˚C
10
5
0.02
0.1 0.5 1
Collector Current IC(A)
5
θ j-a– t Characteristics
5.0
1.0
0.5
0.3
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
30
10
5
1
0.5
0.1
0.05
5
Without Heatsink
Natural Cooling
10 50 100
Collector-Emitter Voltage VCE(V)
300
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
157
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