|
|
PDF D44C12 Data sheet ( Hoja de datos )
| Número de pieza | D44C12 | |
| Descripción | Complementary Silicon Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de D44C12 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
D45C12 (PNP),
D44C12 (NPN)
Complementary Silicon
Power Transistor
The D45C12 and D44C12 areĂfor general purpose driver or
medium power output stages in CW or switching applications.
Features
•ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max)
•ăHigh ft for Good Frequency Response
•ăLow Leakage Current
•ăPb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage
VCEO 80 Vdc
VCES 90 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current - Continuous
Peak (Note 1)
VEB 5.0 Vdc
IC 4.0 Adc
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C
Total Power Dissipation @ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
PD
TJ, Tstg
30
1.67
-ā55 to 150
W
W/°C
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating Conditions is not implied. Extended exposure to stresses above the
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRecommended Operating Conditions may affect device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction-to-Case
RqJC
4.2 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction-to-Ambient
RqJA
75 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8 in from Case for 5 Sec
TL
275 °C
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
http://onsemi.com
4.0 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS 80 VOLTS
4
1
2
3
TO-220AB
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
D4xC12G
AYWW
1
Base
3
Emitter
2
Collector
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 2
1
Publication Order Number:
D45C12/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D44C12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| D44C1 | POWER TRANSISTORS(4A/30-80V/30W) |  Mospec Semiconductor |
| D44C1 | COMPLEMENTARY SILICON POWER TRANSISTORS |  Boca Semiconductor Corporation |
| D44C1 | SILICON NPN POWER TRANSISTORS |  Central Semiconductor |
| D44C1 | Silicon NPN Power Transistor |  Inchange Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |