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PDF RJK1590DP3-A0 Data sheet ( Hoja de datos )
| Número de pieza | RJK1590DP3-A0 | |
| Descripción | High Speed Power Switching MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK1590DP3-A0
150 V - 1 A - MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS (on) = 1.5 typ. (at VGS = 4 V)
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
4
3
2
1
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch
ch-a
Tch
Tstg
Data Sheet
R07DS1255EJ0100
Rev.1.00
Mar 30, 2015
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
150
10
1
4
1
1.04
120
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 7
1 page  
RJK1590DP3-A0
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
1.5
VDS = 10 V
Pulse Test
1.0
ID = 10 mA
0.5 1 mA
0.1 mA
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1 D=1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 μ 100 μ
1m
Switching Time Test Circuit
θch – a(t) = γs (t) • θch – a
θch – a = 120°C/W, Ta = 25°C
PDM
PW
T
D=
PW
T
10 m 100 m
1
Pulse Width PW (s)
10 100 1000
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin
4V
50 Ω
VDD
= 30 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJK1590DP3-A0.PDF ] | |
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