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PDF RJH65T46DPQ-A0 Data sheet ( Hoja de datos )

Número de pieza RJH65T46DPQ-A0
Descripción IGBT
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH65T46DPQ-A0 Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
Application: Power Factor Correction circuit
R07DS1259EJ0100
Rev.1.00
May 18, 2015
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
iC(peak) Note1
IDF
IDF
iDF(peak) Note1
PC
j-c
650
30
80
40
300
30
15
100
340.9
0.44
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
j-cd
Tj Note2
1.33 °C/ W
175 °C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 1 of 9

1 page




RJH65T46DPQ-A0 pdf
RJH65T46DPQ-A0
Switching Characteristics (Typical) (1)
1000
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
td(off)
100 tf
td(on)
tr
10
10
20 30
50 70 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
VCC = 400 V, VGE = 15 V
IC = 40 A, Tc = 150°C
1000
100
10
1
td(off)
tf
tr
td(on)
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 400 V, VGE = 15 V
IC = 40 A, Rg = 10 Ω
td(off)
100
tf
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Preliminary
Switching Characteristics (Typical) (2)
10
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
1
Eoff
Eon
0.1
10
20 30
50 70 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
VCC = 400 V, VGE = 15 V
IC = 40 A, Tc = 150°C
1
Eoff
Eon
0.1
1
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
VCC = 400 V, VGE = 15 V
IC = 40 A, Rg = 10 Ω
1
Eoff
Eon
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
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