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Número de pieza | RB706F-40 | |
Descripción | Schottky Barrier Diode | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RB706F-40 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Small Signal
Features
◇ Low reverse current, high reliability
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇ Case : SOT-323 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Polarity : Indicated by cathode band
◇ Weight : 5 ± 0.5 mg
◇ Marking Code : ZA
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
( t = 8.3 ms )
Symbol
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR = 10 μA
IF = 1 mA
VR = 10 V
VR = 1 V , f = 1.0 MHz
Symbol
V(BR)
VF
IR
CJ
RB706F-40
Low VF SMD Schottky Barrier Diode
SOT-323
Value
45
40
30
0.2
500
125
-55 to + 125
Min Max
45 -
- 0.37
-1
2 (TYP)
Units
V
V
mA
A
oC/W
oC
oC
Units
V
V
μA
pF
Version : B14
1 page Dimensions
DIM.
A
B
C
D
E
F
Unit(mm)
Min
1.80
Max
2.20
1.15 1.35
0.15 0.40
1.20 1.40
2.00 2.45
0.80 1.10
Unit(inch)
Min Max
0.07 0.09
0.05 0.05
0.01 0.02
0.05 0.06
0.08 0.10
0.03 0.04
Version : B14
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RB706F-40.PDF ] |
Número de pieza | Descripción | Fabricantes |
RB706F-40 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
RB706F-40 | Schottky Barrier Diodes | LGE |
RB706F-40 | Schottky Barrier Diode | Taiwan Semiconductor |
RB706F-40 | Schottky barrier Diode | JCET |
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