|
|
PDF NP90N06VLG Data sheet ( Hoja de datos )
| Número de pieza | NP90N06VLG | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP90N06VLG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N06VLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N06VLG-E1-AY Note
NP90N06VLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZP) typ. 0.27 g
FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±90 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±90
±180
Total Power Dissipation (TC = 25°C)
PT1
105
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
PT2
Tch
Tstg
IAR
EAR
1.2
175
−55 to +175
32
102
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19794EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
1 page  
NP90N06VLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
16
12 VGS = 4.5 V
8
10 V
4
0
-75
ID = 45 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
SWITCHING CHARACTERISTICS
100
tf
td(off)
td(on)
10 tr
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 10 V
1
VGS = 0 V
0.1
0.01
0.001
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.01 0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
40
VDD = 48 V
30 V
12 V
30
VGS
20
10
8
6
4
10
0
0
VDS
20 40
2
ID = 90 A
0
60 80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D19794EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP90N06VLG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP90N06VLG | N-channel Power MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |