|
|
PDF K3090 Data sheet ( Hoja de datos )
| Número de pieza | K3090 | |
| Descripción | MOSFET ( Transistor ) - 2SK3090 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3090 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
2SK3090
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK3090
Chopper Regulator DC−DC Converter and Motor Drive
Applications
z Low drain−source ON resistance
: RDS (ON) = 16 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 26 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 30 V)
z Enhancement mode
: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
45
135
60
220
45
6
150
−55 to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
2.08
83.3
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2009-09-29
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3090.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3090 | MOSFET ( Transistor ) - 2SK3090 | Toshiba Semiconductor |
| K3093LS | MOSFET ( Transistor ) - 2SK3093LS |  Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |