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PDF STM4417 Data sheet ( Hoja de datos )
| Número de pieza | STM4417 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STM4417
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mW) Max
-40V
-10A
14 @ VGS=-10V
19 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
D5
D6
D7
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
-40
±20
-10
-8
-56
56
2.5
1.6
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
50 °C/W
Details are subject to change without notice.
1
Apr,24,2013
www.samhop.com.tw
1 page  
STM4417
V DS
L
RG
-20V
tp
D .U .T
IA S
0 .0 1 W
-
+
VDD
Unclamped Inductive Test Circuit
Figure 13a.
Ver 1.0
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
1
0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
0.001
Single Pulse
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t )
4. Duty C ycle, D=t1/t 2
0.00001
0.0001
0.001
0.01
0.1
1
10 100
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
1000
Apr,24,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STM4417.PDF ] | |
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