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PDF BAS16V Datasheet ( Hoja de datos )

Número de pieza BAS16V
Descripción Plastic-Encapsulate Diodes
Fabricantes WILLAS 
Logotipo WILLAS Logotipo

Total 2 Páginas
		
BAS16V Hoja de datos, Descripción, Manual
WILLAS
SOT-563 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16TVHRU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SWITCHLINowGprDoIfiOleDsuErface mounted application in order to
optimize board space.
FEATURLEowSpower loss, high efficiency.
z FasHtigShwcuitrcrehnint cgaSpapbeileityd, low forward voltage drop.
z F••orGHiGugaherdsnrueirnrggaelfocPar puoavrpebriolvistoyel.taSgewpitrcohteinctgioAn.pplications
z HigUhltrCa ohnigdhu-scpteaendcsewitching.
z PbS-Filriceoen eppaitcakxaiagl pelainsaar cvhaipil,ambeletal silicon junction.
Lead-free parts meet environmental standards of
RoHMISL-pSrToDd-1u9c5t0f0or/2p2a8cking code suffix ”G”
HaRloogHeSnprfordeuectpforropdaucckitngfocrodpeascukffiinxg"Gc"ode suffix “H”
z MMoHiseatlcougrheenaSfrneeeincpsraiotdilvudcittyafoLtr apeavceklin1g code suffix "H"
Epoxy : UL94-V0 rated flame retardant
MarkingC:aKseA:MMolded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
MaximuPmolaRriatyti:nIngMdsiect@ahtoeTdda2b=0y22c65athode band
Package outline
SOD-123H
SOT-563
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
6 51 4
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
1 23
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MountingPParoasmitieotne:rAny
Weight :
Non-Repetitive
APpeparkoxRiemvaetersde0V.0o1l1taggraem
Symbol
VRM
Limit
100
Unit
V
Peak RepetitivMeAPXeIaMkURMeveRrAseTIVNoGltaSgAeND ELECVTRRRMICAL CHARACTERISTICS
WRaotirnkgisngat P25eak aRmebvienrst teemVopeltraagtuere unless otherwise sVpReWcMified.
75
V
DSiCngBlelophcaksineghaVlfowltaavgee, 60Hz, resistive of inductive load. VR
  RFoMr ScaRpaecviteivreseloaVdo,ldtaegraete current by 20%
VR(RMS)
53
V
Forward ContinuouRsATCINuGrrSent
Marking Code
MAavxeimraugmeRReceucrrteifnitePdeaOkuRtepvuetrsCe uVrorlteanget
SYMBOIFLM
FM120-MH
12
FM130-MH FM13400-0MH
13 14
FM150-MH
15
FM160-MH
16
FM180-MH
18
FMm11A00-MH
10
FM1150-MH FM1200-MH
115 120
UN
VRRMIO 20 30 42000 50 60
80 m10A0
150 200 Vol
MPaexaimkuFmoRrwMSarVdolStaugrege Current @t=1.0μs
VRMS
14
21
228.0 35
42
Maximum DC Blocking Voltage
@t =1.0s
IFSM
VDC
20
30
410.0 50
60
56 70 105 140 Volt
80
A
100
150 200 Volt
MPaoxwimeurmDAivsesraipgaetFioornward Rectified Current
 
PTehaek rFmorwaal rRd eSusrigsetaCnurcreentJ8u.3nmcstisoinnglteohaAlfmsinbei-ewnavte
IO PD
 
IFSMRθJA
150 1.0 mW
 
833 30 K/W
Am
 
Am
sJuupenrcimtpioosnedToenmrapteedrlaotaudr(eJEDEC method)
TSytpoicraalgTeheTrmeaml Rpeesriasttaunrcee (Note 2)
Typical Junction Capacitance (Note 1)
Tj
RΘJA
CJ
TSTG
  150
  -55~+150
40
120
 
 
℃/W
PF
EOLpEerCatiTngRTIeCmApeLratCurHe RAaRngAe CTERISTICS
Storage Temperature Range
(Ta=T2ST5TJG
unless
-55 to +125
otherwise
specified)
 
- 65 to +175
-55 to +150
 
ParaCmHAeRteArCTERISTICS
SYSMyBmOLboFMl 120-MH FTMe1s3t0-MHcFoMn1d4i0t-ioMnHsFM150-MH FM160M-MiHn FM180-MMH aFxM1100-MH FMU11n5i0t-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85
0.9 0.92 Vol
MaRxeimvuemrsAevebrraegeakRdeovewrsne vCourlrteangt eat @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IVR (BR)
  NORTeESv:erse voltage leakage current
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
  Forward voltage
 
VF
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
07.55
10
1
25
0.715
0.855
1
V
µA
nA
V
 
mAm
IF=150mA
1.25
Diode capacitance
CD VR=0, f=1MHz
2 pF
Reveres recovery time
2012-06
2012-1
IF=IR=10mA,Irr=0.1×IR,
trr RL=100
4 ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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