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PDF BAT46W Datasheet ( Hoja de datos )

Número de pieza BAT46W
Descripción Surface Mount Schottky Barrier Diodes
Fabricantes Diotec 
Logotipo Diotec Logotipo



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BAT46W Hoja de datos, Descripción, Manual
BAT46W
BAT46W
Surface Mount Schottky Barrier Diodes
Schottky-Barrier-Dioden für die Oberflächenmontage
Version 2009-10-29
Power dissipation – Verlustleistung
2.7 Repetitive peak reverse voltage
Periodische Spitzensperrspannung
0.6 0.1
Type
Code
3.8
Dimensions - Maße [mm]
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
200 mW
100 V
SOD-123
0.01 g
Maximum ratings (TA = 25°C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 10 ms
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
BAT46W
Ptot 200 mW 1)
IFAV 150 mA 1)
IFRM 350 mA 1)
IFSM 750 mA
VRRM
100 V
Tj -55...+125°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage
Durchlass-Spannung
Leakage current – Sperrstrom 2)
Leakage current – Sperrstrom 2)
Tj = 60°C
Total capacitance
Gesamtkapazität
f = 1 Mhz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 0.1 mA
IF = 10 mA
IF = 250 mA
VR = 1.5 V
VR = 10 V
VR = 50 V
VR = 75 V
VR = 1.5 V
VR = 10 V
VR = 50 V
VR = 75 V
VR = 0 V
VR = 1 V
Kennwerte (Tj = 25°C)
VF < 0.25 V
VF < 0.45 V
VF < 1 V
IR < 0.5 µA
IR < 0.8 µA
IR < 2 µA
IR < 5 µA
IR < 5 µA
IR < 7.5 µA
IR < 15 µA
IR < 20 µA
CT typ. 20 pF
CT typ. 12 pF
RthA < 420 K/W 1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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