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PDF BAS16T Datasheet ( Hoja de datos )

Número de pieza BAS16T
Descripción SWITCHING DIODE
Fabricantes WILLAS 
Logotipo WILLAS Logotipo



Total 3 Páginas
		
BAS16T Hoja de datos, Descripción, Manual
WILLAS MMBD414F8MT120-M+
SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
BAS16FTM1T2H0R0U-M+
SOD-123+ PACKAGE
Pb Free Product
SWFEITACTHUFIRNBbeeEaGttaStcehtDruprIeOrroveDceersEsses
design,
leakage
excellent
current a
power diss
nd thermal
ipation offers
resistance.
z FastLSoww iptcrohfiilnegsuSrpfaecee dmounted application in order to
optimize board space.
z ForGLoewneporawlePr luosrps,ohsigehSewffiicticehnicnyg. Applications
z HighHCigohncduurrcetnat ncacpeability, low forward voltage drop.
z Pb-••FGHrieugaehrdspruairncggekfaocargpoeavebisrilvitaoyl.vtaagielapbroletection.
RoHUSltprarohdiguhc-st pfoeer dpsawciktcinhgingc.ode suffix ”G”
HaloSgielincofnreeepitparxoiadlupclatnfaorrcphaipc,kminegtalcsoildiceonsujufnficxtioHn.
z MoisLtMueIraLed-S-SfTreeDne-s1pi9at5irvt0si0tmy/2eL2ee8tveenlv1ironmental standards of
RoHS product for packing code suffix "G"
Marking: HMaMlogBeDn f4re1e4p8roTd:uKctAfo2r,packing code suffix "H"
MBeAcS1h6aTn:Aic2al data
Epoxy : UL94-V0 rated flame retardant
MaximumCaRseat:iMnogldse@d pTlaas=ti2c,5SOD-123H
Terminals
P:Palraatemdetteerrminals,
solderable
per
,
MSILy-mSTbDo-l750
Non-Repetitive PeakMReethvoedrs2e0V26oltage
Polarity : Indicated by cathode band
VRM
Package outline
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
1
2
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Limit
Unit
100
V
Dimensions in inches and (millimeters)
Peak RepMetoituivnetinPgePakosRiteiovner:sAenyVoltage
VRRM
WorkingPWeeaikghRte:vAeprpsreoVxiomltaatgeed 0.011 gram
DC Blocking Voltage
VRWM
VR
75
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RMS Reverse Voltage
Ratings at 25℃ ambient
temperature
unless
otherwise
speVcRif(iReMdS. )
53
FoSrinwgalerdphCaosnetihnaulfowuasvCe,u6r0reHnzt, resistive of inductive load. IFM
300
V
mA
  AvFeoracgaepaRcieticvetiflioeadd,Oduetrpautet Ccuurrerennt bt y 20%
IO
150
mA
Peak Forward SurgeRCAuTrIrNeGntS@t=1.0μs
Marking Code
@ t=1.0s
Maximum Recurrent Peak Reverse Voltage
Power Dissipation
Maximum RMS Voltage
SYMBOL FM120-MH FM130-MH FM1402-M.0H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
IFSM12 13 14 1.0 15 16
18 A10
115 120
VRRM
20
30
40
50
60
Pd 200
VRMS
14
21
28
35
42
80 100
mW
56 70
150 200 Vo
105 140 Vo
TMhaexrimmuaml RDeCsBislotacnkicneg VJoulntacgteion to Ambient
VDC RθJA20 30 40625 50 60
80 K/W100
150 200 Vo
JMunaxcitmiounmTAevmerapgeeraFtourwreard Rectified Current
IO Tj
150 1.0
Am
  Storage Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
  TSTG
IFSM
-55~+150
 
30
 
Am
ElsTeuycppeitcrriamilcpToahselerdRmoaanl tRrianetesgdissltoaan@dce(JTE(NaDoE=teC22m5)ethod)
Typical JunctionPCaarpaacmitaentceer (Note 1)
Operating Temperature Range
RSetovreargseeTebmrepearkadtuorewRnanvgoeltage
RΘJA
SymbCoJl
TJ
VT(SBRTG)
Min
75
 
 
-55Tytop+125 Max
Unit
V
40
120
 
 
 
Con-5d5ittioon+1s50
- 65 to +175 IR=1μA
P
 
VF1
0.715 V
IF=1mA
CHARACTERISTICS
FMoarxwimaurmd FvoorlwtaargdeVoltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VSFY2VMFBOL
FM120-MH
FM130-MH FM014.08-5M5H
0.50
FM150V-MH FM160-MH
0.70
FM180-IMF0=H.81F50Mm11A00-MH
FM1150-MH
0.9
FM1200-MH
0.92
UN
Vo
VF3IR
VF4
1.0 V
1.25 V
0.5 IF=50mA
10 IF=150mA
 
mA
 
RN1-eOMvTeeEaSrss:ueredcuatr1reMnHtZ
and
applied
reverse
voltage
of
4.0
IR1
VDIRC2.
1 μA
25 nA
VR=75V
VR=20V
  C2-aTphaecrmitaal nRceseisbtaenctwe Fereomn JtuenrcmtioinntaolAsmbient
CT
2 pF
VR=0V,f=1MHz
 
Reverse recovery time
trr
4 ns
IF=IR=10mA
Irr=0.1XIR,RL=100
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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