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PDF DAN222M Data sheet ( Hoja de datos )
| Número de pieza | DAN222M | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DAN222M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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WILLAS
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN222M THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SWITCHINopGtimDizIeObDoEard space.
• Low power loss, high efficiency.
FEATUR• EHiSgh current capability, low forward voltage drop.
z Ultra ••SGHmiugaahrlldsruSirnuggerffaocarcpoeavebMrilvoitoyul.tnatgine gprTotyepcetion.
z Ultra •HUigltrha Shipgeh-esdpeSewd sitwcihtcinhigngA. pplications
z
z
High ••RLSeeillaiicadob-nfirleeitepyiptaaxritaslmpleaentaerncvhiripo,nmmeetnatlaslislitcaonndjaurndcstioofn.
Pb-FreMeILp-aScTkDa-g19e5i0s0 a/2v2a8ilable
RoHS• RporoHdSupcrot dfoucrtpfoarcpkaicnkgingcocoddee ssuuffffixix"G”G" ”
z
HalogMeHnealfcorgeheenapfrnreoeidcpuraocdltufdcotrafoptraapcakckiningg ccooddeesusfufixff"ixH"“H”
Moisture Sensitivity Level 1
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
SOT-723 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
MARKIN•GC:aNse : Molded plastic, SOD-123H
• Terminals :Plated terminals, solderable
per
MI
L-
,
STD-750
Method 2026
MAXIMU•MPoRlaAriTtyIN: InGdSica(teTda=by2c5a℃thoudnelebasnsd otherwise noted )
Sym•boMlounting Position : Any
Parameter
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Value
Unit
VRR•MWeight : ApPperaokxiRmeavteedrs0e.0V1o1ltgargaem
80 V
VRWM
MAWXIoMrkUinMg PReAaTk IRNeGveSrsAeNVDoltEagLeECTRICAL CHARACTERISTIC8S0
V
RaVtinRg(RsMaSt) 25℃ ambRieMnSt teRmepveerrasteurVe oulntalegses otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For caIOpacitive load, CdeornattiencuuoruresnFt boyrw2a0%rd Current
56 V
100 mA
IFM
PReaAkTIFNoGrSward Current
SYMBOL FM120-MH FM130-MH FM140-MH FM315000-MH FM160-MH FM180-MmH AFM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12 13
14 15 16
MaximIFuSmM Recurrent PNeaoknR-ReveeprseetiVtivoeltaPgeeak ForwardVSRRuMrge Cu2r0rent (t=310µs) 40 504 60
18 10
80 A 100
115 120
150 200 Vo
MaximPumD RMS VoltagPe ower Dissipation
VRMS
14
21
28
31550 42
56 mW 70
105 140 Vo
Maximum DC
RθJA
Blocking Voltage
Thermal
Resistance
from
JunVctDioCn
to
20
Ambient
30
Maximum Average Forward Rectified Current
IO
40 50 60
80 100
833 1.0 ℃/W
150 200 Vo
Am
Tj
Junction Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
150
30
superiTmsptogsed on rated lSoatodr(aJEgDeETCemmeptheorda)ture
-55~+150
Typical Thermal Resistance (Note 2)
RΘJA
ELTEypCicTalRJuICncAtioLn CCaHpaAcitRanAceC(NToEteR1I)STICS(Ta=25℃CJunless otherw ise specified)
40
120
Operating Temperature Range
StoraPgaerTaemmepeterarture Range
Symbol
TJ
TSTG
-55 to +125
Test conditions
M- 6in5
to
Typ
+175
℃
℃
-55 to +150
Max
Unit
Am
℃
P
℃
℃
Re verse voltage
=V(BR) IR 100uA
80 V
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RevMearsxiemucmurFroernwtard V=oltage at 1.0A DC IR VVRF 70V
0.50 0.70
0.85 0.1
0µ.A9 0.92 Vo
ForwMaaxridmuvmolAtavegreage Re=verse Current at @VTF A=25℃ IFIR 100mA
Rated DC Blocking Voltage
@T A=125℃
0.5
1.2 V
mA
10
To tal capacitance
NOTES:
==Ctot VR 6V,f 1MHz
Rev1e- rMseeasruerecdoavte1rMyHtZimaned applied reverse votrlrtage of 4.0 VDCI.F= IR=5mA, VR=6V,RL=50Ω
3.5 pF
4 ns
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DAN222M.PDF ] | |
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