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PDF MRF555 Data sheet ( Hoja de datos )

Número de pieza MRF555
Descripción NPN SILICON RF LOW POWER TRANSISTOR
Fabricantes Motorola Semiconductors 
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No Preview Available ! MRF555 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF555/D
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF555
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO 16 Vdc
Collector–Base Voltage
VCBO 36 Vdc
Emitter–Base Voltage
VEBO 4.0 Vdc
Collector Current — Continuous
IC 400 mAdc
Operating Junction Temperature
TJ 150 °C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
Storage Temperature Range
PD 3.0 Watts
40 mW/°C
Tstg – 55 to +150 °C
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
— Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
— Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
— Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
— 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE 50 90 200 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob — 3.5 5.0 pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF555
1

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MRF555 pdf
PACKAGE DIMENSIONS
R
A
SEATING
PLANE
C
F
1
42
3
N
H
D
K
T
J
CASE 317D–02
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
INCHES
DIM MIN MAX
A 0.175 0.205
C 0.075 0.100
D 0.033 0.039
F 0.097 0.104
H 0.348 0.383
J 0.008 0.012
K 0.285 0.320
N ––– 0.065
R ––– 0.128
T 0.025 0.040
MILLIMETERS
MIN MAX
4.45 5.20
1.91 2.54
0.84 0.99
2.46 2.64
8.84 9.72
0.24 0.30
7.24 8.12
––– 1.65
––– 3.25
0.64 1.01
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
MOTOROLA RF DEVICE DATA
MRF555
5

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