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PDF FTP02N65 Data sheet ( Hoja de datos )
| Número de pieza | FTP02N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
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FTP02N65
FTA02N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP02N65
FTA02N65
PACKAGE
TO-220
TO-220F
BRAND
FTP02N65
FTA02N65
Pb Lead Free Package and Finish
VDSS
650V
RDS(ON) (Max.)
5.0 Ω
ID
2.0A
D
G DS
TO-220
Not to Scale
G DS
TO-220F
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP02N65 FTA02N65
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
650
2.0 2.0*
Figure 3
Figure 6
54 21
0.43 0.17
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=38 mH, ID=2.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
84
Figure 8
3.0
V
mJ
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
FTP02N65
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
©2006 InPower Semiconductor Co., Ltd.
2.3
62
FTA02N65
6.0
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
FTP02N65/FTA02N65 REV. B October 2006
1 page  
Figure 6. Maximum Peak Current Capability
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1---5----0----–----T----C---
125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
7 PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
6 VDS = 10 V
5
4
3
2
1
0
2.5
+150 oC
+25 oC
-55 oC
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-Source Voltage (V)
6.5
Figure8. Unclamped Inductive
Switching Capability
10.0
STARTING TJ = 25 oC
1.0
STARTING TJ = 150 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1E-6
10E-6 100E-6 1E-3
10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
10
9
PULSE DURATION = 2 µs
DUTY CYCLE = 0.5% MAX
8 TC=25°C
7 VGS = 10V
6 VGS = 20V
5
4
3
2
1
012345 67 8
ID, Drain Current (A)
©2006 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.0A
25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP02N65/FTA02N65 REV. B October 2006
Page 5 of 9
5 Page | ||
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| PDF Descargar | [ Datasheet FTP02N65.PDF ] | |
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