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Número de pieza | DX10N60R | |
Descripción | N-Channel MOSFET | |
Fabricantes | Dexin Chip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DX10N60R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! DX10N60R/DX10N60F
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanced
DeXin’s MOSFET Technology, which provides low on- state
resistance,rugged avalanche, high switching performance and
excellent quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
VDS = 660V @ Tjmax
ID = 10A
@ VGS = 10V
RDS(ON) ≤ 0.7Ω @ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
DX F Series
TO-220F
DX Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
G
S
MDP10N60G MDF10N60G
600
660
±30
10 10*
6.3 6.3*
40 40*
156 48
1.25 0.38
15.6
4.5
520
-55~150
`
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jun. 2010 Version 1.2
Symbol
RθJA
RθJC
MDP10N60G
62.5
0.8
MDF10N60G
62.5
2.6
Unit
oC/W
1 www.dexinchip.com
1 page 20000
18000
16000
14000
single Pulse
RthJC = 0.8℃/W
TC = 25℃
12000
10000
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.13 Single Pulse Maximum Power
Dissipation DX10N60R(TO-220)
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Fig.15 Maximum Drain Current vs. Case
Temperature
16000
14000
12000
single Pulse
RthJC = 2.6℃/W
TC = 25℃
10000
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
Pulse Width (s)
1
Fig.14 Single Pulse Maximum Power
Dissipation DX10N60F(TO-220F)
10
Jun. 2010 Version 1.2
5 www.dexinchip.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DX10N60R.PDF ] |
Número de pieza | Descripción | Fabricantes |
DX10N60F | N-Channel MOSFET | Dexin Chip |
DX10N60R | N-Channel MOSFET | Dexin Chip |
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