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Número de pieza | FDD13AN06A0 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! November 2013
FDD13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 50 A, 13 mΩ
Features
• RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
• QG(tot) = 22 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
Formerly developmental type 82555
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 80oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy ( Note 1)
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
FDD13AN06A0
60
±20
50
9.9
Figure 4
56
115
0.77
-55 to 175
Thermal Characteristics
RθJC
Rθ
RθJA
Thermal Resistance Junction to Case, Max. D-PAK
Thermal Resistance Junction to Ambient, Max. D-PAK
Thermal Resistance Junction to Ambient, Max. D-PAK, 1in2 copper pad area
1.3
100
52
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
1
www.fairchildsemi.com
1 page Typical Characteristics TC = 25°C unless otherwise noted
1.4 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
1000
COSS ≅ CDS + CGD
CISS = CGS + CGD
10
VDD = 30V
8
6
CRSS = CGD
100
40
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 50A
ID = 25A
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
5
www.fairchildsemi.com
5 Page Mechanical Dimensions
TO-252 3L (DPAK)
Figure 21. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
11
www.fairchildsemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet FDD13AN06A0.PDF ] |
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FDD13AN06A0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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