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PDF BD955F Data sheet ( Hoja de datos )
| Número de pieza | BD955F | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD949F/951F/953F/955F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
·Complement to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD949F
60
VCBO
Collector-Base Voltage
BD951F
BD953F
80
100
V
BD955F
120
BD949F
60
VCEO
BD951F
Collector-Emitter Voltage
BD953F
80
100
V
BD955F
120
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
8
22
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
8.12 ℃/W
isc website：www.iscsemi.cn
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD955F.PDF ] | |
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