|
|
PDF IRF6216PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF6216PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF6216PBF-1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-150
0.24
33
-2.2
V
Ω
nC
A
IRF6216PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8
A
D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF6216PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF6216PbF-1
IRF6216TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
1 www.irf.com © 2014 International Rectifier
Typ.
–––
–––
Submit Datasheet Feedback
Max.
20
50
Units
°C/W
June 30, 2014
1 page  
IRF6216PbF-1
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100
TC , Case Temperature ( °C)
125
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1000
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF6216PBF-1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF6216PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |