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Número de pieza | IRF3717PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! IRF3717PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
Applications
20 V
4.4 mΩ
22 nC
20 A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF3717PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF3717PbF-1
IRF3717TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
± 20
20
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Notes through are on page 10
Typ.
–––
–––
Max.
20
50
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014
1 page IRF3717PbF-1
20 2.5
15
2.0
10 ID = 250μA
1.5
5
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
0.01
R2R2
R3R3
R4R4
τCτ
Ri (°C/W)
1.4174
11.3607
τi (sec)
0.000277
0.103855
τ2 τ2
τ3 τ3
τ4 τ4
21.8639 1.362000
15.3721 39.60000
0.1
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
t2
1 10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRF3717PBF-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF3717PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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