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Número de pieza | IRF100B202 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRF100B202
HEXFET® Power MOSFET
D VDSS 100V
RDS(on) typ.
7.2m
G
max
8.6m
IS
D (Silicon Limited)
97A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
Gate
Base part number
IRF100B202
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
GDS
TO-220AB
IRF100B202
D
Drain
S
Source
Orderable Part Number
IRF100B202
25
ID = 58A
20
TJ = 125°C
15
10 TJ = 25°C
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
August 18, 2014
1 page 1000
100
TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
2.0
Fig 9. Typical Source-Drain Diode Forward Voltage
130
Id = 5.0mA
120
110
100
1000
100
IRF100B202
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
2.0
1.6
1.2
0.8
0.4
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
40
VGS = 5.0V
35 VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
30 VGS = 8.0V
VGS = 10V
25
0.0
0
20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
120
Fig 12. Typical Coss Stored Energy
20
15
10
5
0 20 40 60 80 100 120
ID, Drain Current (A)
Fig 13. Typical On– Resistance vs. Drain Current
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 18, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRF100B202.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF100B201 | Power MOSFET ( Transistor ) | International Rectifier |
IRF100B202 | Power MOSFET ( Transistor ) | International Rectifier |
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