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PDF 2SC5090 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5090 | |
| Descripción | Silicon NPN Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5090
DESCRIPTION
·High Gain Bandwidth Product
fT = 10 GHz TYP.
·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
40 mA
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
20 mA
0.1 W
125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5090
VCE = 8 V, IC = 20 mA, ZO = 50Ω
Freque.
S11
MHz
MAG.
ANG.
200
0.319
-91.9
400
0.213
-134.2
600
0.185
-160.0
800
0.176
-178.2
1000
0.174
167.8
1200
0.178
156.8
1400
0.186
147.5
1600
0.194
139.7
1800
0.199
133.7
2000
0.215
127.8
S21
MAG.
ANG.
18.383
126.7
10.303
99.2
7.111
90.3
5.415
84.3
4.400
79.2
3.712
74.8
3.236
70.3
2.874
66.3
2.583
62.6
2.369
58.8
S12
MAG.
ANG.
0.033
65.3
0.054
68.9
0.076
70.8
0.098
71.2
0,120
71.1
0,143
70.3
0.168
68.7
0,190
66.6
0.211
64.9
0,232
63.5
S22
MAG.
ANG.
0.494
-43.5
0.312
-42.4
0.258
-37.6
0.236
-34.3
0.228
-32.0
0.226
-31.5
0.226
-32.8
0.223
-35.9
0.216
-39.0
0.211
-41.9
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5090.PDF ] | |
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