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PDF MTB2D0N04H8 Data sheet ( Hoja de datos )
| Número de pieza | MTB2D0N04H8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB2D0N04H8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C072H8
Issued Date : 2015.12.28
Revised Date : 2016.03.04
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04H8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
40V
152A(silicon limit)
84A(package limit)
23A
1.64mΩ(typ)
1.89mΩ(typ)
Symbol
MTB2D0N04H8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB2D0N04H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB2D0N04H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C072H8
Issued Date : 2015.12.28
Revised Date : 2016.03.04
Page No. : 5/ 10
Typical Characteristics
Typical Output Characteristics
200
10V, 9V, 8V, 7V, 6V, 5V
160
VGS=4V
120
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
80
VGS=3.5V
0.8
40
0
0
VGS=3V
12 34
VDS, Drain-Source Voltage(V)
5
Static Drain-Source On-State resistance vs Drain Current
100
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
10
VGS=4.5V
1
0.01
VGS=10V
0.1 1
10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
80
70
ID=20A
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8 VGS=10V, ID=20A
2.4
2
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C :1.64mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB2D0N04H8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTB2D0N04H8.PDF ] | |
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